US 12,405,882 B2
Memory system, data storage device, user device and data management method thereof
Hyojin Jeong, Seongnam-si (KR); Youngjoon Choi, Seongnam-si (KR); Sunghoon Lee, Seoul (KR); and Jae-Hyeon Ju, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD, Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jan. 7, 2022, as Appl. No. 17/570,816.
Application 17/570,816 is a continuation of application No. 13/283,866, filed on Oct. 28, 2011, granted, now 11,232,022.
Claims priority of application No. 10-2010-0106946 (KR), filed on Oct. 29, 2010; and application No. 10-2010-0106947 (KR), filed on Oct. 29, 2010.
Prior Publication US 2022/0129374 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 12/02 (2006.01); G06F 3/06 (2006.01)
CPC G06F 12/0246 (2013.01) [G06F 3/0616 (2013.01); G06F 3/0652 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 2212/7205 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A memory device comprising:
a flash memory including a plurality of flash memory regions that include a first flash memory region and a second flash memory region, each of the plurality of flash memory regions including a plurality of flash memory sub-regions;
a buffer memory including a plurality of buffer memory regions that include a first buffer memory region and a second buffer memory region; and
a controller configured to receive from an external device a request to unwrite a first file stored in the buffer memory to the flash memory, and, in response to the request to unwrite the first file, to perform an unwrite operation based on a first table that contains first writing statement information on each buffer memory region of the plurality of buffer memory regions and based on a second table that contains second writing statement information on each flash memory region of the plurality of flash memory regions,
wherein the controller is configured to perform the unwrite operation by a unit of flash memory region.