US 12,405,853 B2
Data storage device and searching method for reading voltage thereof
Fahao Li, Shenzhen (CN)
Assigned to Silicon Motion, Inc., Jhubei (TW)
Filed by Silicon Motion, Inc., Jhubei (TW)
Filed on Apr. 8, 2024, as Appl. No. 18/628,831.
Claims priority of application No. 202310402077.0 (CN), filed on Apr. 14, 2023.
Prior Publication US 2024/0345918 A1, Oct. 17, 2024
Int. Cl. G06F 11/10 (2006.01); G11C 16/34 (2006.01); G11C 29/42 (2006.01)
CPC G06F 11/1016 (2013.01) [G06F 11/1048 (2013.01); G06F 11/1068 (2013.01); G11C 16/3404 (2013.01); G11C 29/42 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of searching for read voltages of a data storage device, wherein the data storage device comprises a calculation circuit and a non-volatile flash memory, and the method is executed by the calculation circuit to perform following steps:
reading a memory segment through a plurality of read voltages to obtain a plurality of sampling data respectively, wherein the read voltages are composed of pairs of adjacent read voltages, and the memory segment is from the non-volatile flash memory;
counting first bits in each of the sampled data to obtain a first bit number, wherein the first bit numbers correspond to the read voltages respectively;
obtaining a number difference from the first bit numbers of each of the pairs of adjacent read voltages;
calculating a coefficient matrix according to the read voltages and the number differences;
calculating a plurality of fitting values according to the read voltages and the coefficient matrix, wherein the fitting values correspond to the read voltages respectively; and
selecting a read voltage among the read voltages corresponding to a minimum fitting value among the fitting values, in order to read the memory segment to perform an error correction program.