| CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); H04L 9/0866 (2013.01); H04L 9/3278 (2013.01)] | 13 Claims |
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1. A storage device comprising:
a nonvolatile memory comprising a memory cell array of memory cells divided into a first memory cell group and a second memory cell group;
a memory controller; and
a physically unclonable function (PUF) circuit configured to generate PUF data, based on an output of the second memory cell group, by excluding, from the output of the second memory cell group, an output of a first exclusion area, an output of a second exclusion area, and an output of a third exclusion area,
wherein the first exclusion area has a threshold voltage equal to or greater than a first read level and less than a second read level, the second exclusion area has a threshold voltage less than a third read level that is less than the first read level, and the third exclusion area has a threshold voltage equal to or greater than a fourth read level that is greater than the second read level.
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