US 12,405,731 B2
Data writing methods, memory storage device and memory control circuit unit
Chun Teng Cheng, Miaoli County (TW); Jia-Fan Chien, Taichung (TW); Yu-Cheng Hsu, Yilan County (TW); and Wei Lin, Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Feb. 22, 2024, as Appl. No. 18/583,871.
Claims priority of application No. 112149501 (TW), filed on Dec. 19, 2023.
Prior Publication US 2025/0199693 A1, Jun. 19, 2025
Int. Cl. G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 12/1009 (2016.01)
CPC G06F 3/0619 (2013.01) [G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 12/1009 (2013.01)] 39 Claims
OG exemplary drawing
 
1. A data writing method, adapted for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of word lines and a plurality of bit lines intersecting the plurality of word lines, wherein the intersection of the word lines and the bit lines forms a plurality of memory cells for storing data, wherein the rewritable non-volatile memory module comprises P word lines, each word line comprising M segments corresponding to M string sets, wherein each of the M segments and intersected N bit lines form N memory cells corresponding to a same string set, and the N memory cells form a physical unit such that the M×N memory cells of each word line form M physical units corresponding to M string sets, the method comprising:
obtaining a write command, wherein the write command is configured to instruct to write a write data into the rewritable non-volatile memory module;
writing, according to the write command, a first data in the write data into a target physical unit of a target word line among the P word lines;
selecting, after writing the first data, one or more further target physical units that are respectively located within one or more further target word lines while one or more blank physical units, available to be written, are within the target word line and arranged sequentially after the target physical unit according to the order of the M string sets; and
writing a second data, subsequent to the first data, of the write data into the selected one or more further target physical units.