US 12,405,532 B2
Polymer and composition for forming an anti-reflective film and method of manufacturing an integrated circuit device using the anti-reflective film
Miyeong Kang, Suwon-si (KR); Sukkoo Hong, Suwon-si (KR); Hyereun Kim, Suwon-si (KR); Jihyun Kim, Hwaseong-si (KR); Hyunjin Kim, Hwaseong-si (KR); Hyojung Roh, Hwaseong-si (KR); Jongkyoung Park, Hwaseong-si (KR); and Jungyoul Lee, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-Si (KR)
Filed on Apr. 11, 2023, as Appl. No. 18/133,166.
Application 18/133,166 is a continuation of application No. 16/695,569, filed on Nov. 26, 2019, granted, now 11,650,502.
Claims priority of application No. 10-2019-0036211 (KR), filed on Mar. 28, 2019.
Prior Publication US 2023/0244146 A1, Aug. 3, 2023
Int. Cl. G03F 7/09 (2006.01); C08G 18/38 (2006.01); C08G 18/79 (2006.01); C09D 175/04 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01)
CPC G03F 7/091 (2013.01) [C08G 18/3802 (2013.01); C08G 18/3819 (2013.01); C08G 18/792 (2013.01); C09D 175/04 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01)] 19 Claims
 
1. A method of manufacturing an integrated circuit device, the method comprising:
forming an anti-reflective film on a feature layer using a composition comprising an organic solvent and a polymer having a repeating unit represented by Formula 1:

OG Complex Work Unit Chemistry
wherein each of R1, R2, and R3 is independently selected from —CH2CF3, —OC(CH3)3, —OCH2CF3, —OCF3, or —OCF2CF3, wherein at least one of R1, R2, and R3 is a hydrocarbon group that is substituted with at least one fluorine atom,
R4 is a C1-C10 saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms,
R5 is a C1-C10 saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms;
forming a photoresist film on the anti-reflective film;
exposing a first resist region of the photoresist film to light, the first resist region covering a first local region of the anti-reflective film; and
developing the photoresist film using a development agent to remove the exposed first resist region and to form a photoresist pattern, wherein the developing of the photoresist film increases a hydrophilicity of a top surface of the first local region of the anti-reflective film.