US 12,405,527 B2
Photomask, method of fabricating a photomask, and method of fabricating a semiconductor structure using a photomask
Tzu Han Liu, Tainan (TW); Chih-Wei Wen, Tainan (TW); and Chung-Hung Lin, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/749,167.
Application 17/749,167 is a continuation of application No. 16/794,912, filed on Feb. 19, 2020, granted, now 11,340,524.
Claims priority of provisional application 62/827,488, filed on Apr. 1, 2019.
Prior Publication US 2022/0276552 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09J 201/08 (2006.01); B32B 27/30 (2006.01); B32B 27/40 (2006.01); C09J 7/30 (2018.01); G03F 1/24 (2012.01); G03F 1/48 (2012.01); G03F 1/60 (2012.01)
CPC G03F 1/48 (2013.01) [B32B 27/304 (2013.01); B32B 27/40 (2013.01); C09J 7/30 (2018.01); C09J 201/08 (2013.01); G03F 1/24 (2013.01); G03F 1/60 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photomask, comprising:
a substrate;
a patterned layer over a first surface of the substrate; and
a polymer multilayer over a second surface of the substrate, wherein the polymer multilayer comprises a thermoplastic polymer and a hydrophobic layer, wherein the thermoplastic polymer is between the hydrophobic layer and the second surface of the photomask,
wherein the polymer multilayer further comprises an adhesive layer between the thermoplastic polymer and the second surface of the substrate.