US 12,405,412 B2
Infrared band pass filter having Si:NH layers with refraction index greater than 3.5
Cheng-Tang Mu, Taoyuan (TW); and Yu-Ching Su, Taoyuan (TW)
Assigned to Platinum Optics Technology Inc., Taoyuan (TW)
Filed by Platinum Optics Technology Inc., Taoyuan (TW)
Filed on Jun. 7, 2023, as Appl. No. 18/331,075.
Application 18/331,075 is a division of application No. 16/508,936, filed on Jul. 11, 2019, granted, now 11,714,219.
Claims priority of application No. 201810921532.7 (CN), filed on Aug. 14, 2018.
Prior Publication US 2023/0314678 A1, Oct. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01N 21/35 (2014.01); G01N 29/42 (2006.01); G02B 1/04 (2006.01); G02B 1/115 (2015.01); G02B 5/20 (2006.01); G02B 5/28 (2006.01); G02B 13/14 (2006.01)
CPC G02B 5/281 (2013.01) [G01N 21/35 (2013.01); G01N 29/42 (2013.01); G02B 1/115 (2013.01); G02B 5/208 (2013.01); G02B 5/288 (2013.01); G02B 13/14 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An infrared band pass filter, comprising:
a first multilayer film, wherein the multilayer film comprises:
a plurality of Si:NH layers, wherein a refraction index of each Si:NH layer is larger than 3.5 in a wavelength range between 800 nm and 1100 nm; and
a plurality of first low refraction index layers, stacking with the plurality of Si:NH layers alternatively, wherein a refraction index of each first low refraction index layer is smaller than 3 in the wavelength range between 800 nm and 1100 nm;
a substrate, wherein the substrate is formed on the first multilayer film; and
a second multilayer film, formed on the other surface of the substrate, opposite to the first multilayer film, and wherein the second multilayer film comprises:
a plurality of Si:NH layers, wherein a refraction index of each Si:NH layer is greater than 3.5 in the wavelength range between 800 nm and 1100 nm; and
a plurality of second low refraction index layers, stacking with the plurality of Si:NH layers alternatively, wherein a refraction index of each second low refraction index layer is less than 3 in the wavelength range between 800 nm and 1100 nm;
wherein the substrate directly contacts the Si:NH layer of the first multilayer film and the Si:NH layer of the second multilayer film.