US 12,405,323 B2
Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal drift
Quang Le, San Jose, CA (US); Xiaoyong Liu, San Jose, CA (US); Hisashi Takano, Fujisawa (JP); and Brian R. York, San Jose, CA (US)
Assigned to Western Digital Technologies, Inc., San Jose, CA (US)
Filed by Western Digital Technologies, Inc., San Jose, CA (US)
Filed on Dec. 19, 2023, as Appl. No. 18/545,847.
Prior Publication US 2025/0199093 A1, Jun. 19, 2025
Int. Cl. G01R 33/07 (2006.01)
CPC G01R 33/07 (2013.01) 21 Claims
OG exemplary drawing
 
1. A half bridge circuit, comprising:
a first spin-orbit torque (SOT) layer having a first end and a second end opposite the first end;
a first ferromagnetic (FM) layer disposed on the first SOT layer;
a first ground connected to the first end of the first SOT layer;
a first voltage sensor connected to the second end of the first SOT layer;
a bias source connected to the first FM layer;
a second SOT layer having a first end and a second end opposite the first end;
a second FM layer disposed on the second SOT layer, the second FM layer being connected to the bias source;
a second ground connected to the second end of the second SOT layer; and
a second voltage sensor connected to the first end of the second SOT layer.