US 12,405,300 B2
Systems and method to test semiconductor devices
Chin-Hao Chang, Hsinchu (TW); Meng-Hsiu Wu, Hsinchu (TW); Chiao-Yi Huang, Zhubei (TW); Manoj Mhala, Hsinchu (TW); and Calvin Yi-Ping Chao, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jul. 31, 2023, as Appl. No. 18/362,216.
Application 18/362,216 is a continuation of application No. 16/884,684, filed on May 27, 2020, granted, now 11,754,616.
Prior Publication US 2023/0375611 A1, Nov. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 31/26 (2020.01); G01R 31/319 (2006.01); G11C 16/26 (2006.01)
CPC G01R 31/2626 (2013.01) [G01R 31/31905 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for testing semiconductor devices, comprising:
obtaining, by a noise detector, a plurality of first results measured on a semiconductor device;
comparing, by the noise detector, each of the plurality of first results with a stored first boundary value and a stored second boundary value, wherein the stored first boundary value corresponds to a maximum value determined from a plurality of second results measured on the semiconductor device, and the stored second boundary value corresponds to a minimum value determined from a plurality of third results measured on the semiconductor device;
determining, by the noise detector based on the comparison between each of the plurality of first results and each of the stored first boundary value and the stored second boundary value, whether to update the stored first boundary value and the stored second boundary value;
in response to the comparison, updating, by the noise detector, the stored first boundary value to a maximum value of the plurality of first results, and the stored second boundary value to a minimum value of the plurality of first results;
calculating, by the noise detector, a first delta value that is a difference between the updated first boundary value and the updated second boundary value; and
updating, by the noise detector, a timer corresponding to random telegraph noise (RTN) of the semiconductor device responsive to the first delta value exceeding a first noise threshold.