| CPC C30B 23/002 (2013.01) [C30B 23/025 (2013.01); C30B 23/066 (2013.01); C30B 29/36 (2013.01)] | 15 Claims |

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1. An apparatus for synchronous growth of silicon carbide crystals in multiple crucibles comprises a chamber and an insulation layer assembly arranged close to inner walls of the chamber,
wherein a plurality of heater components are arranged at intervals inside the insulation layer assembly, by which the chamber is divided into a plurality of independent growth cavities that are linearly arranged, and each of the growth cavities is provided with an independent growth assembly,
wherein the independent growth assembly comprises a graphite crucible and a seed crystal tray arranged on a top of the graphite crucible, and
wherein:
the graphite crucible is connected with a drive assembly at a bottom of the graphite crucible, and the drive assembly is used to drive the graphite crucible to move in its growth cavity;
the drive assembly comprises a lifting mechanism and a rotating mechanism;
the lifting mechanism comprises a hollow lifting rod connected to the bottom of the graphite crucible in a sliding way and a lifting motor fixed at a bottom of the chamber and connected with a bottom end of the hollow lifting rod; and
the rotating mechanism comprises a stepping motor fixed inside the hollow lifting rod and a rotating rod coaxially and fixedly connected with an output shaft of the stepping motor, with the rotating rod being fixedly connected with the bottom of the graphite crucible.
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