US 12,404,601 B2
Method for growing crystals
Robert Ebner, Leonding (AT); Kanaparin Ariyawong, Leonding (AT); Ghassan Barbar, Neunkirchen (DE); and Chih-Yung Hsiung, Leonding (AT)
Assigned to EBNER Industrieofenbau GmbH, Leonding (AT)
Appl. No. 18/028,685
Filed by EBNER Industrieofenbau GmbH, Leonding (AT)
PCT Filed Sep. 23, 2021, PCT No. PCT/AT2021/060343
§ 371(c)(1), (2) Date Mar. 27, 2023,
PCT Pub. No. WO2022/061388, PCT Pub. Date Mar. 31, 2022.
Claims priority of application No. A 50821/2020 (AT), filed on Sep. 28, 2020.
Prior Publication US 2023/0357951 A1, Nov. 9, 2023
Int. Cl. C30B 23/06 (2006.01); C30B 23/00 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); C30B 29/36 (2006.01)
CPC C30B 23/002 (2013.01) [C30B 23/06 (2013.01); C30B 25/10 (2013.01); C30B 25/16 (2013.01); C30B 29/36 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for growing crystals by means of PVT or PVD or CVD or epitaxial sublimation, comprising the steps;
providing a chamber (11) for the crystal growth;
providing a crucible (1), which is arranged in the chamber (11), and which crucible (1) comprises at least one deposition section with a seed crystal (2) and a base material (3) for growing a crystal;
providing at least one temperature monitoring device (6),
providing a gas supply device (4) and at least one fluid inlet and outlet (17),
providing a pressure monitoring device (8),
evacuating the chamber (11) by means of a pumping device (9)
flushing the chamber (11) with an inert gas,
heating the chamber (11) to a growth temperature of 2000 to 2400° C. by means of at least one heating device (5);
decreasing the pressure to 0.1 to 100 mbar;
supplying a dopant;
regulating the process parameters in the growth process
increasing the pressure in the chamber (11) at the end of the growth process
cooling down the chamber (11)
wherein the heating of the chamber (11) from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes and
wherein a resistance measuring device is provided, wherein the resistance measuring device determines the Si and/or C content in the gas phase in the chamber (11) by a resistance measurement (18), which detects a change in a specific resistance due to the deposition of Si.