| CPC C23C 16/45553 (2013.01) [C07F 1/02 (2013.01); C23C 16/30 (2013.01); C23C 16/45531 (2013.01); C23C 16/45555 (2013.01); H01M 4/131 (2013.01); H01M 4/5825 (2013.01)] | 12 Claims |

|
1. A method for forming a Li-containing film, islet or cluster on a substrate, the method comprising the steps of:
introducing a silicon-free lithium precursor having a general formula
[Li—NL1L2-Dx]y (I)
into a reactor containing the substrate disposed therein, wherein
L1 is a C1-C16 linear or branched chains, or of the form (CmHn)-ER1R2 or (CmHn)-E′R1, wherein
CmHn is an alkyl chain and may be linear or branched groups;
E represents B, N;
E′ represents a divalent element selected from O, S;
m is an integer which value is 1 or an integer ranging from 1 to 8;
n is an independent integer ranging from 2 to 16;
R1 is independent and selected from the group consisting of hydrogen, linear or branched groups, or linear or branched or substituted by other atoms or groups;
R2 is independent and selected from the group consisting of hydrogen, linear or branched groups, or linear or branched groups substituted by other atoms or groups;
L2 is of the form (CpHq)-ER3R4 or (CpHq)-E′R3, wherein
CpHq is an alkyl chain and may be linear or branched groups;
E represents B, N;
E′ represents a divalent element selected from O, S;
p and q are independent integers ranging from 1 to 16;
R3 and R4 are independent and selected from the group consisting of hydrogen, linear or branched alkyl groups, or linear or branched groups substituted by other atoms or groups;
D is independently selected from monodentate, bidentate, tridentate, or polydentate neutral coordinating ligand system;
x is an integer comprised between 0 and 4; and
y represents the degree of association of the molecule and is comprised between 1 and 6; and
depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.
|