US 12,404,584 B2
Parallel atomic layer deposition of target element interiors
Yogesh Tomar, Madhya Pradesh (IN); Nikshep Patil, Hubballi (IN); Kirubanandan Shanmugam Naina, Bangalore (IN); Hanish Kumar Panavalappil Kumarankutty, Karnataka (IN); Gayatri Natu, Maharashtra (IN); Mahesh Chelvaraj Arcot, Maharashtra (IN); Senthil Kumar Nattamai Subramanian, Hosur (IN); Hari Venkatesh Rajendran, Tamil Nadu (IN); Michael Rice, Pleasanton, CA (US); and Christopher Laurent Beaudry, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jul. 18, 2023, as Appl. No. 18/223,199.
Prior Publication US 2025/0027195 A1, Jan. 23, 2025
Int. Cl. C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/45529 (2013.01) [C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method comprising:
performing an atomic layer deposition (ALD) process with respect to a plurality of components, each component comprising a target element, to coat interiors of the target elements of the plurality of components with a protective coating, wherein performing the ALD process comprises:
alternating delivery of a first precursor inside each of the target elements for a first duration to form an adsorption layer on the interiors of the target elements;
alternating purging of the first precursor from the target elements for a second duration, wherein the purging is performed for a first interior of a first target element while delivery of the first precursor is performed for a second interior of a second target element; and
alternating delivery of a second precursor inside each of the target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the target elements, wherein the delivery of the second precursor is performed for the first interior of the first target element while purging is performed for the second interior of the second target element or a third interior of a third target element.