US 12,404,583 B2
Transition metal nitride deposition method
Elina Färm, Helsinki (FI); Jan Willem Maes, Wilrijk (BE); Charles Dezelah, Helsinki (FI); and Shinya Iwashita, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Dec. 6, 2023, as Appl. No. 18/530,653.
Application 18/530,653 is a continuation of application No. 17/849,077, filed on Jun. 24, 2022, granted, now 11,885,014.
Claims priority of provisional application 63/216,076, filed on Jun. 29, 2021.
Prior Publication US 2024/0110277 A1, Apr. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01)
CPC C23C 16/34 (2013.01) [C23C 16/45527 (2013.01); C23C 16/458 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method of depositing a transition metal nitride-containing material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate comprising a substrate surface in a reaction chamber, wherein the substrate surface comprises a material selected from the group consisting of bulk silicon, germanium, Group II-VI or Group III-V semiconductor materials, dielectric materials, tungsten, ruthenium, molybdenum, cobalt, aluminum, and copper;
providing an organometallic transition metal precursor to the reaction chamber in a vapor phase;
providing an auxiliary reactant to the reaction chamber in a vapor phase; and
providing a nitrogen precursor into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate surface;
wherein the organometallic transition metal precursor comprises a transition metal from any of groups 4 to 6 of the periodic table of elements.