US 12,404,582 B2
Method and apparatus for embedding ruthenium in recess formed on substrate surface
Tadahiro Ishizaka, Nirasaki (JP); Mikio Suzuki, Nirasaki (JP); and Toshio Hasegawa, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Appl. No. 18/292,262
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
PCT Filed Jul. 15, 2022, PCT No. PCT/JP2022/027910
§ 371(c)(1), (2) Date Jan. 25, 2024,
PCT Pub. No. WO2023/008239, PCT Pub. Date Feb. 2, 2023.
Claims priority of application No. 2021-122649 (JP), filed on Jul. 27, 2021.
Prior Publication US 2024/0360547 A1, Oct. 31, 2024
Int. Cl. C23C 16/04 (2006.01); C23C 16/16 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01)
CPC C23C 16/045 (2013.01) [C23C 16/16 (2013.01); C23C 16/458 (2013.01); C23C 16/52 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for embedding ruthenium in a recess formed on a surface of a substrate, the method comprising:
forming a ruthenium layer in a region including a bottom portion of the recess by supplying a first gas including, as a first ruthenium precursor, a ruthenium compound that does not contain oxygen and carbon atoms to the substrate having a metal exposed on a bottom surface of the recess; and
subsequently embedding ruthenium in the recess so as to cover the ruthenium layer by supplying a second gas including, as a second ruthenium precursor, Ru3(CO)12 to the substrate.