US 12,404,580 B2
Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film
Takafumi Dasai, Ibaraki (JP); Takayuki Asano, Ibaraki (JP); and Takeo Okabe, Ibaraki (JP)
Assigned to JX Advanced Metals Corporation, Tokyo (JP)
Appl. No. 16/982,125
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Nov. 21, 2018, PCT No. PCT/JP2018/043048
§ 371(c)(1), (2) Date Sep. 18, 2020,
PCT Pub. No. WO2019/187329, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 2018-068855 (JP), filed on Mar. 30, 2018.
Prior Publication US 2021/0025049 A1, Jan. 28, 2021
Int. Cl. C23C 14/34 (2006.01); B22F 1/05 (2022.01); B22F 3/15 (2006.01); C01B 33/06 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/3414 (2013.01) [B22F 1/05 (2022.01); B22F 3/15 (2013.01); C01B 33/06 (2013.01); C23C 14/0682 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01); B22F 2301/20 (2013.01); B22F 2302/45 (2013.01); B22F 2304/10 (2013.01); C23C 14/34 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A hot-pressed tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase,
wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSix with X>2.0;
wherein, when observing a sputtering surface, a ratio (I1/S1) of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase is 5% or less;
wherein a ratio of a median diameter D50 of the Si grains forming the Si phase to a median diameter D50 of the WSi2 grains forming the WSi2 phase is 0.306 or less,
wherein a Weibull modulus of flexural strength is 2.1 or more, and
wherein the tungsten silicide target has an oxygen concentration of 5000 ppm by mass or less.