US 12,404,578 B1
Method for forming a chromium nitride/oxide film
Khan Alam, Dhahran (SA); Muhammad Baseer Haider, Dhahran (SA); Khalil A. Ziq, Dhahran (SA); and Bakhtiar Ui Haq, Dhahran (SA)
Assigned to KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed by KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS, Dhahran (SA)
Filed on May 19, 2025, as Appl. No. 19/211,710.
Application 19/211,710 is a continuation of application No. 17/886,139, filed on Aug. 11, 2022, granted, now 12,305,272.
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 14/35 (2006.01); C23C 14/06 (2006.01)
CPC C23C 14/0676 (2013.01) [C23C 14/35 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for forming an oxide phase-containing chromium nitride thin film, comprising:
cleaning a substrate by sonicating with acetone and/or isopropyl alcohol;
reactive radio frequency magnetron sputtering chromium onto the substrate in the presence of a gaseous mixture comprising nitrogen, oxygen and argon to form the chromium nitride thin film which comprises a CrOxNy phase, wherein:
a ratio of the nitrogen gas to the argon gas is 1:2 to 1:10,
the chromium nitride thin film has an average thickness of 500 to 1500 nm,
the chromium is sputtered with a sputtering power of 120-150 W,
a flow rate of the nitrogen gas is from 1 sccm to 4 sccm, and
the chromium nitride film grows in [111]CrN and [002]CrN directions by X-ray diffraction (XRD).