US 12,404,577 B2
Method and apparatus for deposition of piezo-electric materials
Lizhong Sun, San Jose, CA (US); and Xiao Dong Yang, Xi'an (CN)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Appl. No. 17/783,609
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Dec. 31, 2019, PCT No. PCT/CN2019/130795
§ 371(c)(1), (2) Date Jun. 8, 2022,
PCT Pub. No. WO2021/134606, PCT Pub. Date Jul. 8, 2021.
Prior Publication US 2023/0009085 A1, Jan. 12, 2023
Int. Cl. C23C 14/06 (2006.01); C23C 14/02 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 14/54 (2006.01); H10N 30/076 (2023.01); H10N 30/853 (2023.01)
CPC C23C 14/0617 (2013.01) [C23C 14/024 (2013.01); C23C 14/345 (2013.01); C23C 14/35 (2013.01); C23C 14/541 (2013.01); H10N 30/076 (2023.02); H10N 30/853 (2023.02)] 8 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
depositing a first piezoelectric material layer on the substrate in a first processing chamber by use of a physical vapor deposition process, wherein the first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature, and a target used in the physical vapor deposition process comprises aluminum and scandium, wherein depositing the first piezoelectric material layer comprises:
establishing a distance between a surface of the target and a surface of the substrate, the distance being between about 30 mm and 70 mm;
maintaining a bias power between about 20 Watts (W) and about 50 W; and
maintaining a magnetic rotation speed between about 100 rpm and 150 rpm;
after depositing the first piezoelectric material layer, cooling the first piezoelectric material layer and the substrate in a second processing chamber; and
after cooling the first piezoelectric material layer and the substrate, depositing a second piezoelectric material layer on the first piezoelectric material layer at a second temperature, wherein:
the first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material, and
the first temperature is between 120° C. and 600° C., and the second temperature is less than or equal to 100° C.