US 12,404,450 B2
Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film
Masahiro Takata, Kanagawa (JP); Masashi Ono, Kanagawa (JP); and Shunsuke Kitajima, Kanagawa (JP)
Assigned to FUJIFILM Corporation, Tokyo (JP)
Filed by FUJIFILM Corporation, Tokyo (JP)
Filed on Dec. 20, 2021, as Appl. No. 17/555,519.
Application 17/555,519 is a continuation of application No. PCT/JP2020/019470, filed on May 15, 2020.
Claims priority of application No. 2019-123102 (JP), filed on Jul. 1, 2019.
Prior Publication US 2022/0115610 A1, Apr. 14, 2022
Int. Cl. H10K 30/35 (2023.01); C09K 11/02 (2006.01); C09K 11/66 (2006.01); H10K 39/32 (2023.01); B82Y 15/00 (2011.01)
CPC C09K 11/02 (2013.01) [C09K 11/661 (2013.01); H10K 30/35 (2023.02); H10K 39/32 (2023.02); B82Y 15/00 (2013.01); H10K 30/352 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A photodetector element comprising:
a photoelectric conversion layer that contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot,
wherein the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom, and the photoelectric conversion layer has a thickness of 10 to 600 nm, and a refractive index of 2.0 to 3.0.