US 12,404,423 B2
Chemical-mechanical polishing liquid
Shoutian Li, Shanghai (CN); Xiaoming Ren, Shanghai (CN); and Changzheng Jia, Shanghai (CN)
Assigned to Anji Microelectronics (Shanghai) Co. Ltd, Shanghai (CN)
Appl. No. 17/783,262
Filed by ANJI MICROELECTRONICS (SHANGHAI) CO., LTD, Shanghai (CN)
PCT Filed Dec. 3, 2020, PCT No. PCT/CN2020/133600
§ 371(c)(1), (2) Date Dec. 12, 2022,
PCT Pub. No. WO2021/121043, PCT Pub. Date Jun. 24, 2021.
Claims priority of application No. 201911320533.7 (CN), filed on Dec. 19, 2019.
Prior Publication US 2023/0104112 A1, Apr. 6, 2023
Int. Cl. C09G 1/02 (2006.01); H01L 21/3105 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/31053 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A chemical mechanical polishing solution, comprising cerium oxide, a polyquaternium, a carboxylic acid containing a benzene ring, polyvinylamine, and water;
wherein the polyquaternium is one or more selected from the group consisting of polyquaternium-1, polyquaternium-2, polyquaternium-4, polyquaternium-6, polyquaternium-10, polyquaternium-11, polyquaternium-16, polyquaternium-37, polyquaternium-39, and polyquaternium-51;
wherein the carboxylic acid containing the benzene ring is one or more selected from the group consisting of salicylic hydroxamic acid, salicylic acid and 4-hydroxybenzoic acid;
wherein a concentration of the polyvinylamine is 0.5-6 ppm.