US 12,404,167 B2
Piezoelectric MEMS device with thermal compensation from different material thicknesses
Siarhei Dmitrievich Barsukou, Takarazuka (JP); Myeong Gweon Gu, Seoul (KR); and Hiroyuki Nakamura, Osaka-Fu (JP)
Assigned to Skyworks Global Pte. Ltd., Singapore (SG)
Filed by Skyworks Global Pte. Ltd., Singapore (SG)
Filed on Sep. 28, 2022, as Appl. No. 17/936,356.
Claims priority of provisional application 63/249,449, filed on Sep. 28, 2021.
Prior Publication US 2023/0112443 A1, Apr. 13, 2023
Int. Cl. H04R 17/00 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); H04R 17/02 (2006.01)
CPC B81B 7/0019 (2013.01) [B81B 3/0021 (2013.01); B81B 3/0072 (2013.01); H04R 17/02 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0264 (2013.01); B81B 2201/032 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0307 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/0353 (2013.01); B81B 2203/04 (2013.01); B81B 2207/115 (2013.01); H04R 2201/003 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A piezoelectric microelectromechanical systems device comprising:
a cavity bounded by walls; and
an asymmetrical bimorph structure at least partially spanning the cavity and including at least a top metal layer, an upper piezoelectric layer, a middle metal layer, a lower piezoelectric layer, and a bottom metal layer, the metal layers including electrode layers having relative thicknesses configured to compensate for expected temperature stress in the bimorph structure, with the top metal layer thicker than the middle and bottom metal layers by an amount configured to offset thermal stress affects that would exist if the two piezoelectric layers had the same thicknesses and the metal layers had the same thicknesses.