US 12,075,711 B2
Magnetic device and magnetic random access memory
Shy-Jay Lin, Jhudong Township (TW); and Mingyuan Song, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 28, 2022, as Appl. No. 17/587,888.
Application 17/587,888 is a division of application No. 16/426,589, filed on May 30, 2019, granted, now 11,239,413, issued on Feb. 1, 2022.
Claims priority of provisional application 62/753,892, filed on Oct. 31, 2018.
Prior Publication US 2022/0158083 A1, May 19, 2022
Int. Cl. H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01)
CPC H10N 52/80 (2023.02) [H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a spin-orbit-torque (SOT) magnetic device, the method comprising:
forming bottom electrodes in a first interlayer dielectric (ILD) layer;
forming a bottom metal layer directly on the bottom electrodes and fully covering an upper surface of the ILD layer;
forming a first layer for a first magnetic layer directly on the bottom metal layer,
wherein the first layer for the first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer, a first interfacial layer disposed between the lower magnetic layer and the middle layer, an upper magnetic layer and a second interfacial layer disposed between the middle layer and the upper magnetic layer, and
at least one of the first and second interfacial layers is made of FeB;
forming a second layer for a spacer layer over the first layer;
forming a third layer for a second magnetic layer over the second layer;
forming a fourth layer for an upper electrode over the third layer;
patterning the fourth, third, second and first layers to form a SOT cell structure disposed on the bottom metal layer connecting the bottom electrodes such that the first magnetic layer is in direct contact with the bottom metal layer;
forming a cover layer to cover a top and sides of the SOT cell structure and a surface of the bottom metal layer; and
forming a second ILD layer over the cover layer,
wherein the bottom metal layer and the first ILD layer are separated from the second ILD layer by the cover layer.