US 12,075,709 B2
Tungsten via for a magnetic tunnel junction interconnect
Ya-Ling Lee, Hsinchu (TW); Wei-Gang Chiu, New Taipei (TW); and Ming-Hsing Tsai, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 16, 2021, as Appl. No. 17/377,753.
Prior Publication US 2023/0016126 A1, Jan. 19, 2023
Int. Cl. H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01)
CPC H10N 50/80 (2023.02) [H10B 61/00 (2023.02); H10N 50/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method for connecting a magnetic tunnel junction to a copper interconnect, the method comprising:
depositing one or more tantalum nitride layers on an upper surface of the copper interconnect and within a via,
wherein at least one of:
at least one of the one or more tantalum nitride layers is doped with carbon, or
at least one of the one or more tantalum nitride layers comprises one or more of a fluorine barrier, or a copper diffusion barrier;
depositing an adhesion layer on an upper surface of the one or more tantalum nitride layers and within the via; and
depositing tungsten on an upper surface of the adhesion layer and within the via for via interconnection of the magnetic tunnel junction to the copper interconnect.