CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); G11C 11/18 (2013.01); H01F 10/324 (2013.01); H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H01F 10/3254 (2013.01)] | 15 Claims |
1. A spin torque device comprising:
a reference magnetic layer (“reference layer”);
a magnetic layer having a switchable magnetisation direction along a first axis (“free layer”);
a non-magnetic layer between the reference layer and the free layer; and
a spin source layer adapted to generate a spin current from a current injected along a second axis perpendicular to the first axis; and
a capping layer, the free layer being between the spin source layer and the capping layer,
wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the switchable magnetisation direction,
wherein the angle is a canting angle of out-of-plane spin and the canting angle is selected to correspond with a predetermined switching polarity, and a predetermined switching current density and a predetermined switching time.
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15. A spintronics device comprising:
a magnetic layer having a switchable magnetisation direction along a first axis, a first surface and opposite second surface (“free layer”);
a spin source layer adapted to generate a spin current from a current injected along a second axis perpendicular to the first axis, the first surface being adjacent the spin source layer,
a fixed layer; and
a non-magnetic layer disposed between the fixed layer and the free layer,
wherein electrons of different spins in the spin source layer are rearranged by scattering so the spin current is generated in a plane perpendicular to the second axis and polarized at an angle to the first axis, so that the spin current diffuses into the free layer to produce spin torque to switch the magnetisation direction,
wherein the angle is a canting angle of out-of-plane spin and the canting angle is selected to correspond with a predetermined switching polarity,
wherein the canting angle is selected to correspond with a predetermined switching current density and with a determined switching time, and
wherein the non-magnetic layer is sandwiched between the free layer and the fixed laver, the spintronics device further comprising a capping layer adjacent the fixed laver.
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