US 12,075,707 B2
Semiconductor structure and method for forming the same
Jiann-Horng Lin, Hsinchu (TW); Kun-Yi Li, Hsinchu (TW); Han-Ting Lin, Hsinchu (TW); Huan-Just Lin, Hsinchu (TW); Chen-Jung Wang, Hsinchu (TW); and Sin-Yi Yang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jul. 25, 2023, as Appl. No. 18/358,897.
Application 18/358,897 is a division of application No. 17/081,742, filed on Oct. 27, 2020, granted, now 11,770,977.
Prior Publication US 2023/0380293 A1, Nov. 23, 2023
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a magnetic tunneling junction (MTJ) pillar comprising a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, a second magnetic layer overlying the tunnel barrier layer, and a protection layer;
a plurality of conductive particles on the protection layer; and
a cap dielectric layer over the conductive particles,
wherein the protection layer disposed above the first magnetic layer and surrounds the tunnel barrier layer and the second magnetic layer.