US 12,075,706 B2
Precessional spin current structure with non-magnetic insertion layer for MRAM
Bartlomiej Adam Kardasz, Pleasanton, CA (US); and Mustafa Michael Pinarbasi, Morgan Hill, CA (US)
Assigned to Integrated Silicon Solution, (Cayman) Inc., Grand Cayman (KY)
Filed by Integrated Silicon Solution, (Cayman) Inc., Grand Cayman (KY)
Filed on Feb. 7, 2022, as Appl. No. 17/665,601.
Application 16/821,656 is a division of application No. 15/445,362, filed on Feb. 28, 2017, granted, now 10,665,777, issued on May 26, 2020.
Application 17/665,601 is a continuation of application No. 16/821,656, filed on Mar. 17, 2020, granted, now 11,271,149.
Prior Publication US 2022/0165942 A1, May 26, 2022
Int. Cl. H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/01 (2023.02) [G11C 11/161 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic device, comprising
a precessional spin current magnetic structure in a first plane, the precessional spin current magnetic structure having a magnetization vector with a magnetization direction in the first plane which can freely rotate in any magnetic direction in the first plane, the precessional spin current magnetic structure comprising a first precessional spin current ferromagnetic layer, a nonmagnetic precessional spin current insertion layer and a second precessional spin current ferromagnetic layer, the nonmagnetic precessional spin current insertion layer being disposed over the first precessional spin current ferromagnetic layer, and the second precessional spin current ferromagnetic layer being disposed over the nonmagnetic precessional spin current insertion layer, wherein the nonmagnetic precessional spin current insertion layer is constructed of a thin film of Ru or another nonmagnetic material having a long spin diffusion length;
a nonmagnetic spacer layer in a second plane and disposed over the precessional spin current magnetic structure, the non-magnetic spacer layer comprising MgO;
a free magnetic layer in a third plane and disposed over the nonmagnetic spacer layer, the free magnetic layer having a magnetization vector that is perpendicular to the third plane and having a magnetization direction that can precess from a first magnetization direction to a second magnetization direction, wherein the free magnetic layer has its easy axis magnetization axis points away from the perpendicular direction to form a tilted angle with respect to the perpendicular plane due to the magnetocrystalline anisotropy of the free magnetic layer, where the tilted angle is a result of the crystalline structure of the free magnetic layer;
a nonmagnetic tunnel barrier layer in a fourth plane and disposed over the free magnetic layer; and
a synthetic antiferromagnetic structure in a fifth plane, the synthetic antiferromagnetic structure including a magnetic reference layer, the magnetic reference layer having a magnetization vector that is perpendicular to the fifth plane and having a fixed magnetization direction, the magnetic reference layer, the nonmagnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction.