	US 12,075,664 B2
	Display substrate comprising silicon organic glass layer, display apparatus, and method of fabricating display substrate
Guoying Wang, Beijing (CN); Yicheng Lin, Beijing (CN); Ling Wang, Beijing (CN); Zhen Song, Beijing (CN); Pan Xu, Beijing (CN); Xing Zhang, Beijing (CN); Ying Han, Beijing (CN); and Zhan Gao, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 16/971,673
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Nov. 4, 2019, PCT No. PCT/CN2019/115340 § 371(c)(1), (2) Date Aug. 20, 2020, PCT Pub. No. WO2021/087667, PCT Pub. Date May 14, 2021.
Prior Publication US 2023/0147375 A1, May 11, 2023
Int. Cl. H10K 59/13 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 59/38 (2023.01)

CPC H10K 59/13 (2023.02) [H10K 59/1213 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/131 (2023.02); H10K 59/38 (2023.02); H10K 59/1201 (2023.02)]

16 Claims

1. A display substrate, comprising a plurality of subpixels;

wherein a respective one of the plurality of subpixels comprises:

a light emitting element;

a first thin film transistor configured to drive light emission of the light emitting element; and

a light emitting brightness value detector;

wherein the light emitting brightness value detector comprises:

a second thin film transistor; and

a photosensor electrically connected to the second thin film transistor and configured to detect a light emitting brightness value;

wherein the display substrate further comprises a stacked structure;

the stacked structure comprises, sequentially,

a base substrate;

the first thin film transistor and the second thin film transistor stacked on the base substrate;

a silicon organic glass layer stacked on at least one of the first thin film transistor or the second thin film transistor;

a conductive protection layer stacked on the silicon organic glass layer; and

the photosensor stacked on the conductive protection layer;

wherein the conductive protection layer extends through the silicon organic glass layer;

the conductive protection layer comprises a first conductive protection block and a second conductive protection block:

an orthographic projection of the first conductive protection block on the base substrate covers the orthographic projection of at least a channel part of the first thin film transistor on the base substrate; and

an orthographic projection of the second conductive protection block on the base substrate covers the orthographic projection of at least a channel part of the second thin film transistor on the base substrate.