US 12,075,641 B2
Organic electroluminescent device and method for preparing the same
Yingchang Gao, Beijing (CN); Yali Huang, Beijing (CN); and Qiannan Wang, Beijing (CN)
Assigned to Chengdu BOE Optoelectronics Technology Co., Ltd., Chengdu (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed by Chengdu BOE Optoelectronics Technology Co., Ltd., Chengdu (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Filed on Sep. 29, 2021, as Appl. No. 17/488,518.
Claims priority of application No. 202110207824.6 (CN), filed on Feb. 24, 2021.
Prior Publication US 2022/0271247 A1, Aug. 25, 2022
Int. Cl. H10K 50/11 (2023.01); H10K 50/16 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 101/40 (2023.01)
CPC H10K 50/11 (2023.02) [H10K 50/16 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 2101/40 (2023.02)] 19 Claims
OG exemplary drawing
 
1. An organic electroluminescent device comprising:
a cathode;
an anode;
an N-type organic semiconductor between the cathode and the anode; and
a P-type organic semiconductor between the N-type organic semiconductor and the anode and in contact with the N-type organic semiconductor,
wherein the P-type organic semiconductor has a LUMO energy level between a LUMO energy level and a HOMO energy level of the N-type organic semiconductor, and an energy level difference between the LUMO energy level of the N-type organic semiconductor and the LUMO energy level of the P-type organic semiconductor corresponds to an electron transition luminescence spectral range in a wavelength range between near-infrared to ultraviolet,
wherein the LUMO energy level of the N-type organic semiconductor is higher than the LUMO energy level of the P-type organic semiconductor by 1.6 eV or more.