CPC H10B 61/22 (2023.02) [G11C 11/161 (2013.01); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); B82Y 25/00 (2013.01)] | 20 Claims |
1. A magnetic random access memory (MRAM), comprising:
a first magnetic layer disposed over a substrate;
a first non-magnetic layer disposed over the first magnetic layer;
a second magnetic layer disposed over the first non-magnetic layer;
a second non-magnetic layer disposed over the second magnetic layer; and
a third non-magnetic layer disposed over the second non-magnetic layer, wherein:
the second magnetic layer includes a plurality of magnetic material pieces,
the plurality of magnetic material pieces are in direct contact with the first non-magnetic layer, and
when viewed from above, shapes of the plurality of magnetic material pieces includes a circular shape, an oval shape or a cloud-shape.
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