US 12,075,628 B2
Magnetic memory devices and methods of formation
Lin Xue, San Diego, CA (US); Chando Park, Palo Alto, CA (US); Jaesoo Ahn, San Jose, CA (US); Hsin-wei Tseng, San Jose, CA (US); and Mahendra Pakala, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Appl. No. 17/423,435
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Jan. 16, 2020, PCT No. PCT/US2020/013791
§ 371(c)(1), (2) Date Jul. 15, 2021,
PCT Pub. No. WO2020/167405, PCT Pub. Date Aug. 20, 2020.
Claims priority of provisional application 62/806,435, filed on Feb. 15, 2019.
Prior Publication US 2022/0115439 A1, Apr. 14, 2022
Int. Cl. H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 50/01 (2023.01)
CPC H10B 61/00 (2023.02) [G11C 11/161 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 50/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a spin-orbit torque magnetoresistive random-access memory cell, comprising:
a magnetic storage layer;
a first lead disposed side by side and in contact with the magnetic storage layer;
a barrier layer disposed in contact with both the first lead and the magnetic storage layer; and
a substrate disposed below and in contact with each of the magnetic storage layer and the first lead.