| CPC H10B 12/315 (2023.02) [G11C 5/063 (2013.01); H01L 29/0607 (2013.01); H10B 12/05 (2023.02); H10B 12/50 (2023.02)] | 15 Claims |
|
1. A semiconductor memory device, comprising:
a bit line extending in a first direction and comprising a metallic material;
a plurality of first active patterns and a plurality of second active patterns alternately disposed in the first direction and overlapping the bit line, wherein each of the plurality of first and second active patterns includes a horizontal portion and a vertical portion vertically extended from one end of the horizontal portion, one of the plurality of first active patterns and one of the plurality of second active patterns, which are adjacent to each other, being disposed to be symmetric with respect to each other;
a plurality of first word lines extending in a second direction different from the first direction and overlapping the bit line, each of the plurality of first word lines being disposed on a horizontal portion of a corresponding one of the plurality of first active patterns;
a plurality of second word lines extending in the second direction and overlapping the bit line, each of the plurality of second word lines being disposed on a horizontal portion of a corresponding one of the plurality of second active patterns; and
a plurality of intermediate structures, each intermediate structure being provided in at least one of a first gap region between a corresponding first word line of the plurality of first word lines and a corresponding second word line, adjacent to the corresponding first word line, of the plurality of second word lines, and a second gap region between a vertical portion of a corresponding first active pattern of the plurality of first active patterns and a vertical portion of a corresponding second active pattern, adjacent to the corresponding first active pattern, of the plurality of second active patterns.,
wherein each of the plurality of intermediate structures comprises an air gap in at least one of the first and second gap regions and a capping pattern covering a top of the air gap.
|