US 12,075,609 B2
Contact structure, contact pad layout and structure, mask combination and manufacturing method thereof
Yu-Cheng Tung, Quanzhou (CN); Yi-Wang Jhan, Quanzhou (CN); Yung-Tai Huang, Quanzhou (CN); Xiaopei Fang, Quanzhou (CN); Shaoyi Wu, Quanzhou (CN); and Yi-Lei Tseng, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on May 14, 2021, as Appl. No. 17/320,244.
Application 17/320,244 is a continuation of application No. PCT/CN2020/079580, filed on Mar. 17, 2020.
Claims priority of application No. 201910926986.8 (CN), filed on Sep. 27, 2019; and application No. 201910926990.4 (CN), filed on Sep. 27, 2019.
Prior Publication US 2021/0272961 A1, Sep. 2, 2021
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/0335 (2023.02) [H10B 12/053 (2023.02); H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 12/50 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
multiple core components comprising active areas; and
multiple contact plugs in the semiconductor device, wherein the contact plugs comprises first contact plugs and at least one second contact plug, and the at least one second contact plug is in a shape of inverted-U or comb, and a bottom of each of the contact plugs contacts the active area;
a plurality of first capacitors directly contact on the first contact plugs; and
a second capacitor directly contact on the at least one second contact plug;
wherein a topmost surface of the at least one second contact plug is not lower than a topmost surface of the first contact plug.