US 12,075,212 B2
Method of electrical trimming of sensitivity and frequency response for piezoelectric MEMS
Christian Bretthauer, Munich (DE); Andreas Bogner, Munich (DE); Gabriele Bosetti, Munich (DE); and Niccoló De Milleri, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 31, 2023, as Appl. No. 18/162,212.
Claims priority of application No. 22157127 (EP), filed on Feb. 16, 2022.
Prior Publication US 2023/0262397 A1, Aug. 17, 2023
Int. Cl. H04R 17/10 (2006.01); B81B 7/00 (2006.01); H04R 3/00 (2006.01); H04R 7/06 (2006.01); H04R 17/02 (2006.01)
CPC H04R 17/10 (2013.01) [B81B 7/008 (2013.01); H04R 3/00 (2013.01); H04R 7/06 (2013.01); H04R 17/02 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/03 (2013.01); H04R 2201/003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectronic mechanical system (MEMS) device comprising:
a piezoelectric transducer having a first frequency behavior, wherein the piezoelectric transducer comprises a piezoelectric trimming region, and
a control circuitry configured to provide a bias signal to the piezoelectric trimming region of the piezoelectric transducer for adjusting a second frequency behavior of the piezoelectric transducer,
wherein the piezoelectric transducer has a membrane structure forming a layer, wherein the piezoelectric trimming region is located within the membrane structure in the same layer as the piezoelectric transducer and at least one piezoelectric transducing element is located within the membrane structure in the layer, and
wherein the piezoelectric trimming region comprises a flap element in the membrane structure, and wherein the flap element is configured to be deflected by the bias signal between a first position and a second position for adjusting the second frequency behavior.