US 12,075,180 B2
Enhanced conversion-gain image sensor
Jiaju Ma, Monrovia, CA (US); and Donald Hondongwa, Pasadena, CA (US)
Assigned to Gigajot Technology, Inc., Pasadena, CA (US)
Filed by Gigajot Technology, Inc., Pasadena, CA (US)
Filed on May 27, 2022, as Appl. No. 17/827,513.
Claims priority of provisional application 63/195,136, filed on May 31, 2021.
Prior Publication US 2022/0385853 A1, Dec. 1, 2022
Int. Cl. H04N 25/778 (2023.01); H01L 27/146 (2006.01); H04N 25/53 (2023.01); H04N 25/709 (2023.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01)
CPC H04N 25/778 (2023.01) [H01L 27/14612 (2013.01); H04N 25/53 (2023.01); H04N 25/709 (2023.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01)] 19 Claims
OG exemplary drawing
 
1. An integrated-circuit pixel comprising:
a silicon substrate having a photodetection element and a floating diffusion node formed therein;
an oxide region; and
a semiconductor region disposed on the oxide region opposite the silicon substrate and having (i) conductively doped regions at either end to form source and drain terminals of a field-effect transistor and (ii) a channel region between the source and drain terminals and situated opposite the oxide layer from the floating diffusion node such that the floating diffusion node implements a gate of the field-effect transistor,
wherein the semiconductor region has a first carrier concentration and wherein a bulk-emulation sub-region of the semiconductor region has a second carrier concentration higher than the first p-type carrier concentration.