US 12,075,178 B2
Image sensor
Francois Roy, Seyssins (FR); and Thomas Dalleau, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Nov. 14, 2022, as Appl. No. 17/986,505.
Claims priority of application No. 2112477 (FR), filed on Nov. 25, 2021.
Prior Publication US 2023/0164459 A1, May 25, 2023
Int. Cl. H04N 25/77 (2023.01); H04N 25/75 (2023.01)
CPC H04N 25/77 (2023.01) [H04N 25/75 (2023.01)] 16 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a pixel array including a plurality of pixels;
wherein each pixel in the pixel array is formed in a portion of a substrate electrically insulated from other portions of the substrate;
wherein each pixel comprises: a photodetector; a transfer transistor; and a readout circuit comprising one or more transistors;
wherein the one or more transistors of the readout circuit are formed inside and on top of at least one well of said portion;
wherein at least one transistor of the readout circuit of a pixel of at least one previous row is configured for reading from the photodetector of a pixel of a current row;
wherein the well of the pixel of the at least one previous row is biased at a first bias voltage; and
wherein the well of the pixel of the current row is biased at a second bias voltage, the first bias voltage being greater than the second bias voltage.