US 12,075,177 B2
Semiconductor device, imaging element, and electronic device
Atsushi Kato, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/756,245
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Oct. 14, 2020, PCT No. PCT/JP2020/038703
§ 371(c)(1), (2) Date May 19, 2022,
PCT Pub. No. WO2021/106402, PCT Pub. Date Jun. 3, 2021.
Claims priority of application No. 2019-217411 (JP), filed on Nov. 29, 2019.
Prior Publication US 2023/0007202 A1, Jan. 5, 2023
Int. Cl. H04N 25/75 (2023.01); H01L 23/00 (2006.01); H01L 27/146 (2006.01); H04N 17/00 (2006.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01)
CPC H04N 25/75 (2023.01) [H01L 24/08 (2013.01); H01L 27/14634 (2013.01); H04N 17/002 (2013.01); H04N 25/77 (2023.01); H04N 25/79 (2023.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first charge accumulation circuit configured to accumulate a first charge;
a first initialization circuit connected to the first charge accumulation circuit, wherein the first initialization circuit is configured to initialize the first charge accumulation circuit;
a first voltage switching circuit connected to the first initialization circuit;
a second charge accumulation circuit configured to:
accumulate a second charge; and
transfer the second charge to the first charge accumulation circuit; and
a second initialization circuit connected to the second charge accumulation circuit, wherein
the second initialization circuit is configured to initialize the second charge accumulation circuit,
the first voltage switching circuit is configured to selectively supply a first voltage and a second voltage to the first initialization circuit and the second initialization circuit, and
the second voltage is different from the first voltage.