US 12,074,830 B2
Millimeter-wave fully-integrated full duplexer modules with and without internal low noise amplifier and power amplifier for 5G applications
Meng-Jie Hsiao, Dallas, TX (US); and Cam V. Nguyen, Newport Coast, CA (US)
Assigned to THE TEXAS A&M UNIVERSITY SYSTEM, College Station, TX (US)
Appl. No. 17/434,808
Filed by The Texas A&M University System, College Station, TX (US)
PCT Filed Mar. 25, 2020, PCT No. PCT/US2020/024698
§ 371(c)(1), (2) Date Aug. 30, 2021,
PCT Pub. No. WO2020/198349, PCT Pub. Date Oct. 1, 2020.
Claims priority of provisional application 62/823,127, filed on Mar. 25, 2019.
Claims priority of provisional application 62/851,313, filed on May 22, 2019.
Prior Publication US 2022/0166597 A1, May 26, 2022
Int. Cl. H04L 5/14 (2006.01); H01P 5/12 (2006.01); H03F 3/24 (2006.01)
CPC H04L 5/1438 (2013.01) [H01P 5/12 (2013.01); H03F 3/245 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A front end (FE) device for a 5th Generation (5G) wireless communication application, comprising:
a single silicon substrate;
a duplexer (DUX) comprising a power divider and a transformer, wherein the power divider and the transformer are implemented on the silicon substrate;
a power amplifier (PA) coupled to the DUX and comprising a main amplifier stage and a PA output port, wherein the PA output port is coupled to the power divider and wherein the PA is implemented on the silicon substrate; and
a low-noise amplifier (LNA) coupled to the power divider and implemented on the silicon substrate, wherein the DUX, the PA, and the LNA are fully-integrated onto the silicon substrate as a standalone device.