US 12,074,601 B2
Dynamic high voltage (HV) level shifter with temperature compensation for high-side gate driver
Chan-Hong Chern, Palo Alto, CA (US); and Kun-Lung Chen, Chu-Pei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Nov. 15, 2022, as Appl. No. 17/987,043.
Application 17/987,043 is a continuation of application No. 17/221,893, filed on Apr. 5, 2021, granted, now 11,522,526.
Application 17/221,893 is a continuation of application No. 16/693,596, filed on Nov. 25, 2019, granted, now 11,005,453, issued on May 11, 2021.
Application 16/693,596 is a continuation of application No. 16/140,982, filed on Sep. 25, 2018, granted, now 10,523,183, issued on Dec. 31, 2019.
Claims priority of provisional application 62/624,499, filed on Jan. 31, 2018.
Prior Publication US 2023/0076455 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03K 3/011 (2006.01); H03K 3/356 (2006.01)
CPC H03K 3/011 (2013.01) [H03K 3/356017 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
providing a level shifter comprising a first resistor, a second resistor, and a transistor, wherein the first resistor is electrically coupled from a first terminal to a first source/drain of the transistor, and wherein the second resistor is electrically coupled from a second terminal to a second source/drain of the transistor;
applying a supply voltage across the level shifter, from the first terminal to the second terminal; and
applying an input voltage to a gate of the transistor to turn the transistor to an ON state;
wherein a voltage drop across the first resistor has a magnitude closer to a magnitude of the input voltage than a magnitude of the supply voltage while the input and supply voltages are applied.