CPC H03H 9/725 (2013.01) [H03H 9/02559 (2013.01); H03H 9/058 (2013.01); H03H 9/25 (2013.01); H03H 9/568 (2013.01); H03H 9/02834 (2013.01)] | 11 Claims |
1. A multiplexer, comprising:
a monolithic stack comprising:
a carrier substrate;
a piezoelectric layer above the carrier substrate having a main surface; and
at least one dielectric layer arranged between the piezoelectric layer and the carrier substrate;
a metallization on top of the main surface comprising:
an antenna terminal for connection with an antenna;
three signal pads;
a trap-rich layer (TRL) provided between the carrier substrate and the piezoelectric layer, wherein the trap-rich layer comprises a polycrystalline silicon layer;
three surface acoustic wave (SAW) filter circuits connected in parallel between the antenna terminal and a respective signal pad, wherein each of the three SAW filter circuits comprises a corresponding series signal line and a number of SAW resonators connected in series with or parallel to the corresponding series signal line; and
a package providing a cavity on top of the monolithic stack, wherein the three SAW filter circuits are enclosed in the cavity that is formed between the main surface of the piezoelectric layer and a lid and/or a cover.
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