US 12,074,575 B2
Low power active phase shifter for phase-array systems
Omar Abdulmonem Mohamed Elsayed, San Jose, CA (US); Venumadhav Bhagavatula, Santa Clara, CA (US); Tienyu Chang, Sunnyvale, CA (US); Siu-Chuang Ivan Lu, San Jose, CA (US); and Sangwon Son, Palo Alto, CA (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 17, 2022, as Appl. No. 17/746,856.
Claims priority of provisional application 63/208,851, filed on Jun. 9, 2021.
Prior Publication US 2022/0399864 A1, Dec. 15, 2022
Int. Cl. H03G 3/30 (2006.01); H03F 3/45 (2006.01); H03K 5/00 (2006.01); H03K 5/01 (2006.01)
CPC H03G 3/30 (2013.01) [H03F 3/45475 (2013.01); H03K 5/01 (2013.01); H03G 2201/103 (2013.01); H03K 2005/00286 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A variable gain amplifier comprising:
a first transconductor circuit coupled to a first input terminal, a first output terminal, and a second output terminal of the variable gain amplifier, the first transconductor circuit comprising:
a plurality of positive coefficient transistors coupled to the first output terminal and configured to selectively conduct current in response to a first binary code, each of the positive coefficient transistors receiving a different bit of the first binary code;
a plurality of negative coefficient transistors coupled to the second output terminal and configured to selectively conduct current in response to a second binary code, each of the negative coefficient transistors receiving a different bit of the second binary code; and
a plurality of amplifying transistors, each having a gate electrode coupled to the first input terminal such that each of the gate electrodes of the plurality of amplifying transistors receives the same signal with the same voltage from the first input terminal, a first electrode coupled to a ground reference, and a second electrode coupled to a different pair of coefficient transistors comprising one of the plurality of positive coefficient transistors and one of the plurality of negative coefficient transistors.