US 12,074,533 B2
Rectifier fast load ballast
John Walley, Ladera Ranch, CA (US); Marc Keppler, Windsor, CO (US); and Jim Le, Fort Collins, CO (US)
Assigned to Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed by Avago Technologies International Sales Pte. Limited, Singapore (SG)
Filed on Jul. 29, 2022, as Appl. No. 17/877,525.
Prior Publication US 2024/0039424 A1, Feb. 1, 2024
Int. Cl. H02M 7/217 (2006.01); H02J 50/10 (2016.01); H02M 1/32 (2007.01); H04L 27/04 (2006.01)
CPC H02M 7/217 (2013.01) [H02J 50/10 (2016.02); H02M 1/32 (2013.01); H04L 27/04 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A rectifier comprising:
a first high side field effect transistor (FET);
a second high side FET;
a first low side FET;
a second low side FET;
a second set of low side FETs, wherein the second low side FET is in the second set of low side FETs;
a coil; and
a controller,
wherein:
the first high side FET, the second high side FET, the first low side FET, and the second low side FET are configured to produce a rectified voltage (VRECT) based on a carrier signal;
the controller is configured to apply, in response to the first low side FET being on, a ballast signal to the second low side FET to produce a load at the coil,
and the controller is further configured to:
measure one or more signal quality metrics of the carrier signal;
determine a modulation depth based on the one or more signal quality metrics; and
determine a number of FETs in the second set of low side FETs to which the ballast signal is applied in order to achieve the determined modulation depth.