US 12,074,240 B2
Backside contact solar cells with separated polysilicon doped regions
David D. Smith, Campbell, CA (US)
Assigned to MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed by MAXEON SOLAR PTE. LTD., Singapore (SG)
Filed on Nov. 18, 2021, as Appl. No. 17/529,719.
Application 12/879,847 is a division of application No. 12/431,684, filed on Apr. 28, 2009, granted, now 7,812,250, issued on Oct. 12, 2010.
Application 17/529,719 is a continuation of application No. 16/923,239, filed on Jul. 8, 2020, granted, now 11,183,607.
Application 16/923,239 is a continuation of application No. 16/506,796, filed on Jul. 9, 2019, granted, now 10,714,647, issued on Jul. 14, 2020.
Application 16/506,796 is a continuation of application No. 16/156,483, filed on Oct. 10, 2018, granted, now 10,396,230, issued on Aug. 27, 2019.
Application 16/156,483 is a continuation of application No. 15/896,449, filed on Feb. 14, 2018, granted, now 10,128,395, issued on Nov. 13, 2018.
Application 15/896,449 is a continuation of application No. 15/585,382, filed on May 3, 2017, granted, now 9,929,298, issued on Mar. 27, 2018.
Application 15/585,382 is a continuation of application No. 15/230,153, filed on Aug. 5, 2016, granted, now 9,666,735, issued on May 30, 2017.
Application 15/230,153 is a continuation of application No. 14/945,931, filed on Nov. 19, 2015, granted, now 9,437,763, issued on Sep. 6, 2016.
Application 14/945,931 is a continuation of application No. 14/612,822, filed on Feb. 3, 2015, granted, now 9,231,145, issued on Jan. 5, 2016.
Application 14/612,822 is a continuation of application No. 14/252,525, filed on Apr. 14, 2014, granted, now 8,975,717, issued on Mar. 10, 2015.
Application 14/252,525 is a continuation of application No. 13/893,005, filed on May 13, 2013, granted, now 8,772,894, issued on Jul. 8, 2014.
Application 13/893,005 is a continuation of application No. 12/879,847, filed on Sep. 10, 2010, granted, now 8,460,963, issued on Jun. 11, 2013.
Claims priority of provisional application 61/060,921, filed on Jun. 12, 2008.
Prior Publication US 2022/0209037 A1, Jun. 30, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01); H01L 31/0236 (2006.01); H01L 31/028 (2006.01); H01L 31/068 (2012.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01); H01L 31/0368 (2006.01); H01L 31/02 (2006.01)
CPC H01L 31/0682 (2013.01) [H01L 31/02008 (2013.01); H01L 31/028 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/02366 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/022458 (2013.01); H01L 31/03682 (2013.01); H01L 31/035272 (2013.01); H01L 31/035281 (2013.01); H01L 31/068 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/18 (2013.01); H01L 31/182 (2013.01); H01L 31/1804 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11)] 16 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a substrate having a front side and a backside;
a first dielectric layer over the backside of the substrate;
a P-type doped region over the first dielectric layer;
an N-type doped region over the first dielectric layer, each of the N-type doped region and the P-type doped region comprising polysilicon;
an isolation region that is disposed between and separates perimeters of the P-type doped region and the N-type doped region;
a second dielectric layer over the P-type doped region and the N-type doped region;
a first metal contact finger that is electrically connected to the P-type doped region; and
a second metal contact finger that is electrically connected to the N-type doped region.