US 12,074,226 B2
Schottky diode integrated with a semiconductor device
Amaury Gendron-Hansen, Bend, OR (US); Dumitru Gheorge Sdrulla, Bend, OR (US); Leslie Louis Szepesi, Bend, OR (US); Tetsuya Takata, Yokohama (JP); Itsuo Yuzurihara, Yokohama (JP); Tomohiro Yoneyama, Yokohama (JP); and Yu Hosoyamada, Yokohama (JP)
Assigned to Analog Power Conversion LLC, Bend, OR (US); and Kyosan Electric Manufacturing Co., Ltd., Yokohama (JP)
Filed by Analog Power Conversion LLC, Bend, OR (US); and Kyosan Electric Manufacturing Co., Ltd., Yokohama (JP)
Filed on Sep. 14, 2021, as Appl. No. 17/475,255.
Prior Publication US 2023/0084411 A1, Mar. 16, 2023
Int. Cl. H01L 29/872 (2006.01); H01L 27/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 27/0629 (2013.01); H01L 29/1608 (2013.01); H01L 29/7827 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor die having a first region and a second region, an operating temperature of the second region being lower than an operating temperature of the first region;
a plurality of first tubs disposed in the first region;
a plurality of second tubs disposed in the second region;
a power device comprising a plurality of power device cells, the power device cells being respectively disposed in the plurality of first tubs; and
a diode having a plurality of diode cells, the plurality of diode cells being respectively disposed in the plurality of second tubs.