CPC H01L 29/868 (2013.01) [H01L 21/26513 (2013.01); H01L 29/0688 (2013.01); H01L 29/6609 (2013.01)] | 20 Claims |
1. A semiconductor structure of diodes, comprising:
an N-type silicon substrate;
an intrinsic layer on the N-type silicon substrate, the intrinsic layer comprising an undoped silicon layer;
a first P-type region for a first PIN diode, the first P-type region extending from a top surface of the intrinsic layer into the intrinsic layer and to a first depth in the intrinsic layer; and
a second P-type region for a second PIN diode, the second P-type region extending from a top surface of the intrinsic layer into the intrinsic layer and to a second depth in the intrinsic layer, wherein the first depth is greater than the second depth.
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