CPC H01L 29/786 (2013.01) [H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a substrate;
a gate electrode formed on the substrate;
a gate dielectric formed over a top surface of the gate electrode;
a source electrode located adjacent to a first side of the gate electrode;
a first etch-stop layer that separates the source electrode from the gate electrode and from the substrate;
a drain electrode located adjacent to a second side of the gate electrode;
a second etch-stop layer that separates the drain electrode from the gate electrode and from the substrate; and
a semiconductor layer formed over the source electrode, the drain electrode, and the gate dielectric.
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