US 12,074,217 B2
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
Christopher N. Brindle, Poway, CA (US); Jie Deng, South Burlington, VT (US); Alper Genc, San Diego, CA (US); and Chieh-Kai Yang, Poway, CA (US)
Assigned to pSemi Corporation, San Diego, CA (US)
Filed by pSemi Corporation, San Diego, CA (US)
Filed on Mar. 19, 2021, as Appl. No. 17/206,436.
Application 13/028,144 is a division of application No. 11/520,912, filed on Sep. 14, 2006, granted, now 7,890,891, issued on Feb. 15, 2011.
Application 13/053,211 is a division of application No. 11/484,370, filed on Jul. 10, 2006, granted, now 7,910,993, issued on Mar. 22, 2011.
Application 17/206,436 is a continuation of application No. 16/987,265, filed on Aug. 6, 2020, granted, now 11,362,652.
Application 16/987,265 is a continuation of application No. 16/853,688, filed on Apr. 20, 2020, granted, now 10,797,691, issued on Oct. 6, 2020.
Application 17/206,436 is a continuation of application No. 16/739,093, filed on Jan. 9, 2020, granted, now 11,011,633, issued on May 18, 2021.
Application 17/206,436 is a continuation of application No. 16/739,081, filed on Jan. 9, 2020, granted, now 11,201,245.
Application 16/853,688 is a continuation of application No. 16/673,411, filed on Nov. 4, 2019, granted, now 10,790,815, issued on Sep. 29, 2020.
Application 16/673,411 is a continuation of application No. 16/671,967, filed on Nov. 1, 2019, granted, now 10,790,814, issued on Sep. 29, 2020.
Application 16/671,967 is a continuation of application No. 16/590,292, filed on Oct. 1, 2019, granted, now 10,784,855, issued on Sep. 22, 2020.
Application 16/590,292 is a continuation of application No. 16/590,262, filed on Oct. 1, 2019, granted, now 10,797,690, issued on Oct. 6, 2020.
Application 16/590,262 is a continuation of application No. 16/377,114, filed on Apr. 5, 2019, granted, now 10,680,600, issued on Jun. 9, 2020.
Application 16/739,093 is a continuation of application No. 16/377,026, filed on Apr. 5, 2019, granted, now 10,790,390, issued on Sep. 29, 2020.
Application 16/377,114 is a continuation of application No. 16/054,959, filed on Aug. 3, 2018, granted, now 10,622,990, issued on Apr. 14, 2020.
Application 16/377,026 is a continuation of application No. 16/046,974, filed on Jul. 26, 2018, granted, now 10,797,172, issued on Oct. 6, 2020.
Application 16/054,959 is a continuation of application No. 15/707,970, filed on Sep. 18, 2017, granted, now 10,153,763, issued on Dec. 11, 2018.
Application 16/046,974 is a continuation of application No. 15/693,182, filed on Aug. 31, 2017, granted, now 10,074,746, issued on Sep. 11, 2018.
Application 16/739,081 is a continuation of application No. 15/419,898, filed on Jan. 30, 2017, granted, now 10,818,796, issued on Oct. 27, 2020.
Application 15/693,182 is a continuation of application No. 15/354,723, filed on Nov. 17, 2016, granted, now 9,786,781, issued on Oct. 10, 2017.
Application 15/707,970 is a continuation of application No. 14/845,154, filed on Sep. 3, 2015, granted, now 9,780,775, issued on Oct. 3, 2017.
Application 15/354,723 is a continuation of application No. 14/804,198, filed on Jul. 20, 2015, granted, now 9,653,601, issued on May 16, 2017.
Application 14/804,198 is a continuation of application No. 14/198,315, filed on Mar. 5, 2014, granted, now 9,087,899, issued on Jul. 21, 2015.
Application 15/419,898 is a continuation of application No. 13/948,094, filed on Jul. 22, 2013, granted, now 9,608,619, issued on Mar. 28, 2017.
Application 14/845,154 is a continuation of application No. 13/850,251, filed on Mar. 25, 2013, granted, now 9,130,564, issued on Sep. 8, 2015.
Application 13/850,251 is a continuation of application No. 13/412,529, filed on Mar. 5, 2012, granted, now 8,405,147, issued on Mar. 26, 2013.
Application 14/198,315 is a continuation of application No. 13/277,108, filed on Oct. 19, 2011, granted, now 8,742,502, issued on Jun. 3, 2014.
Application 13/412,529 is a continuation of application No. 13/053,211, filed on Mar. 22, 2011, granted, now 8,129,787, issued on Mar. 6, 2012.
Application 13/948,094 is a continuation of application No. 13/028,144, filed on Feb. 15, 2011, granted, now 8,954,902, issued on Feb. 10, 2015.
Application 14/198,315 is a continuation in part of application No. 13/028,144, filed on Feb. 15, 2011, granted, now 8,954,902, issued on Feb. 10, 2015.
Application 11/520,912 is a continuation in part of application No. 11/484,370, filed on Jul. 10, 2006, granted, now 7,910,993, issued on Mar. 22, 2011.
Claims priority of provisional application 61/405,165, filed on Oct. 20, 2010.
Claims priority of provisional application 60/718,260, filed on Sep. 15, 2005.
Claims priority of provisional application 60/698,523, filed on Jul. 11, 2005.
Prior Publication US 2021/0320206 A1, Oct. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/36 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 49/02 (2006.01); H03K 17/16 (2006.01)
CPC H01L 29/7841 (2013.01) [H01L 27/1203 (2013.01); H01L 28/00 (2013.01); H01L 29/0649 (2013.01); H01L 29/0688 (2013.01); H01L 29/0847 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/4908 (2013.01); H01L 29/78615 (2013.01); H01L 29/78654 (2013.01); H01L 29/78657 (2013.01); H03K 17/162 (2013.01)] 44 Claims
OG exemplary drawing
 
1. An accumulated charge control (ACC) transistor comprising:
a gate;
a drain;
a source;
a body, wherein the ACC transistor is configured to selectively operate in an on state or an off state, and wherein the ACC transistor is a metal-oxide-semiconductor field effect transistor;
a first accumulated charge sink (ACS) region coupled to the body at a first side of the body and configured to control, via the first ACS region, charge accumulated within the body of the ACC transistor during at least a portion of the off state to improve a linearity of the ACC transistor;
a second ACS region coupled to the body at a second side of the body opposite the first side and configured to control, via the second ACS region, the charge accumulated within the body of the ACC transistor during at least the portion of the off state to improve the linearity of the ACC transistor, wherein the charge accumulated within the body is associated with carriers having a polarity opposite a polarity of carriers in the drain and the source when the ACC transistor is operated in the on state; and
a structure coupled to the first ACS region and the second ACS region.