US 12,074,216 B2
Fin field effect transistor with field plating
Ming-Yeh Chuang, McKinney, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Nov. 18, 2022, as Appl. No. 18/056,962.
Application 18/056,962 is a division of application No. 16/920,903, filed on Jul. 6, 2020, granted, now 11,508,842.
Prior Publication US 2023/0085365 A1, Mar. 16, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/765 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7816 (2013.01) [H01L 21/31111 (2013.01); H01L 21/32133 (2013.01); H01L 21/765 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/66681 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a fin on a substrate;
forming a field plating dielectric layer on a drift region of the fin;
forming a gate dielectric layer on a body region of the fin; and
forming a gate on the gate dielectric layer and a field plate on the field plating dielectric layer, the gate and the field plate forming a contiguous conductive layer.