US 12,074,212 B2
Semiconductor device including a plurality of trenches
Christian Philipp Sandow, Haar (DE); and Matteo Dainese, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 2, 2021, as Appl. No. 17/391,562.
Claims priority of application No. 102020120679.8 (DE), filed on Aug. 5, 2020.
Prior Publication US 2022/0045200 A1, Feb. 10, 2022
Int. Cl. H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7397 (2013.01) [H01L 29/0696 (2013.01); H01L 29/66333 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of trenches extending into in a semiconductor body from a first main surface,
wherein a first group of the plurality of trenches includes a gate electrode, a second group of the plurality of trenches includes a source electrode, and a third group of the plurality of trenches includes an auxiliary electrode,
wherein the source electrode is electrically coupled to a source contact area via a source wiring line and the auxiliary electrode, and the source wiring line and the auxiliary electrode are electrically connected in series between the source contact area and the source electrode, and
wherein the source wiring line extends in parallel to at least two edges of the source contact area.