US 12,074,211 B2
Lateral bipolar transistors
Jagar Singh, Clifton Park, NY (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on Jul. 25, 2022, as Appl. No. 17/872,790.
Prior Publication US 2024/0030320 A1, Jan. 25, 2024
Int. Cl. H01L 29/735 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01)
CPC H01L 29/735 (2013.01) [H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
an emitter in a semiconductor substrate;
a collector in the semiconductor substrate;
a base contact region in the semiconductor substrate and adjacent to the collector and the emitter, wherein the collector and the emitter are between the base contact region; and
a shallow trench isolation structure overlapping the base contact region and further separating the base contact region from the emitter and the collector.