US 12,074,195 B1
Semiconductor device
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Dec. 22, 2023, as Appl. No. 18/394,688.
Claims priority of provisional application 63/584,661, filed on Sep. 22, 2023.
Int. Cl. H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/0619 (2013.01) [H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01)] 46 Claims
OG exemplary drawing
 
1. A multilayered semiconductor diode device comprising:
a substrate comprising silicon carbide (SiC);
an epitaxial transition layer comprising a first semiconductor oxide material or SiC, wherein the epitaxial transition layer is on the substrate;
an epitaxial drift layer comprising a second semiconductor oxide material, wherein the epitaxial drift layer is on the epitaxial transition layer;
a metal layer above the epitaxial drift layer, wherein the metal layer and the epitaxial drift layer form a Schottky barrier junction; and
an epitaxial intermediate layer between the epitaxial drift layer and the metal layer, wherein the epitaxial intermediate layer has a wider bandgap than the epitaxial drift layer, wherein the metal layer, the epitaxial intermediate layer, and the epitaxial drift layer form the Schottky barrier junction.